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IRFH5301PBF の電気的特性と機能

IRFH5301PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH5301PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH5301PBF Datasheet, IRFH5301PBF PDF,ピン配置, 機能
www.DataPShDee-t94U6.2co7m6
IRFH5301PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
1.85
37
1.5
100h
V
m
nC
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Synchronous MOSFET for Buck Converters
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.85m)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5301TRPBF
IRFH5301TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
30
± 20
35
28
h100
h100
400
3.6
110
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
11/18/09

1 Page





IRFH5301PBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
1000
100
IRFH5301PbFwww.DataSheet4U.com
TOP
BOTTOM
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
1 2.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
100
TJ = 150°C
10 2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
ID = 50A
1.6 VGS = 10V
1.4
10
TJ = 25°C
1
VDS = 15V
60µs PULSE WIDTH
0.1
1.5 2 2.5 3 3.5 4 4.5 5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
14
ID= 50A
12
10
8
VDS= 24V
VDS= 15V
1000
Coss
Crss
6
4
2
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
www.irf.com
0
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3


3Pages


IRFH5301PBF 電子部品, 半導体
IRFH5301PbF
www.DataSheet4U.com
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFH5301PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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