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IRFH5210PBF の電気的特性と機能

IRFH5210PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH5210PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH5210PBF Datasheet, IRFH5210PBF PDF,ピン配置, 機能
www.DatPaSDhe-et94U7.4co9m0
IRFH5210PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100 V
14.9 m
39 nC
1.8
55 A
PQFN 5X6 mm
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (14.9mat Vgs = 10V)
Low Thermal Resistance to PCB (1.2°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5210TRPBF
IRFH5210TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
100
±20
10
8.1
55
35
220
3.6
104
0.029
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
04/12/10

1 Page





IRFH5210PBF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
100
IRFH5210PbFwww.DataSheet4U.com
TOP
BOTTOM
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1
10
0.1 3.8V
0.01
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10 TJ = 25°C
VDS = 50V
60µs PULSE WIDTH
1.0
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.8V
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
2.2
ID = 33A
VGS = 10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
12.0
ID= 33A
10.0
8.0
6.0
4.0
2.0
VDS= 80V
VDS= 50V
VDS= 20V
10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRFH5210PBF 電子部品, 半導体
IRFH5210PbF
www.DataSheet4U.com
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFH5210PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRFH5210PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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