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Número de pieza | IRFH5020PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFH5020PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
200 V
55 m:
36 nC
1.9 :
43 A
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low RDSon
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5020TRPBF
IRFH5020TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
fPower Dissipation
fLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through
are on page 8
www.irf.com
Max.
200
± 20
5.1
4.1
43
27
7.8
4.9
63
3.6
8.3
0.07
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
10/7/09
1 page 160
ID = 7.5A
120
TJ = 125°C
80
40
4
TJ = 25°C
8 12 16
VGS, Gate-to-Source Voltage (V)
20
Fig 12. On-Resistance vs. Gate Voltage
IRFH5020PbFwww.DataSheet4U.com
1400
1200
1000
ID
TOP 1.1A
1.6A
BOTTOM 7.5A
800
600
400
200
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5020PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH5020PBF | HEXFET Power MOSFET | International Rectifier |
IRFH5020PBF | HEXFET Power MOSFET | International Rectifier |
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