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IRFH5015PBF の電気的特性と機能

IRFH5015PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFH5015PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFH5015PBF Datasheet, IRFH5015PBF PDF,ピン配置, 機能
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
150
31
33
1.7
ID
(@Tc(Bottom) = 25°C)
56
Applications
Primary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
V
m
nC
A
Features and Benefits
Features
Low RDSon (< 31 m)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
www.DaPtaDShe-e9t47U4.co4m6
IRFH5015PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5015TRPBF
IRFH5015TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
150
± 20
10
8.2
56
36
220
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
01/22/2010

1 Page





IRFH5015PBF pdf, ピン配列
IRFH5015PbFwww.DataSheet4U.com
1000
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
5.0V
1
60µs PULSE WIDTH
0.1 Tj = 25°C
0.01
0.1
5.0V
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
1000
100
TJ = 150°C
10 TJ = 25°C
1000
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.0V
5.5V
5.0V
1 5.0V
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
2.5
ID = 34A
VGS = 10V
2.0
1.5
1.0
1
VDS = 50V
60µs PULSE WIDTH
0.1
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
14.0
12.0
ID= 34A
10.0
8.0
VDS= 120V
VDS= 75V
VDS= 30V
6.0
100 Crss
4.0
2.0
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0 5 10 15 20 25 30 35 40 45
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3


3Pages


IRFH5015PBF 電子部品, 半導体
IRFH5015PbF
www.DataSheet4U.com
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
*VGS=10V
VDD
ISD
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
L
VCC
DUT
0
1K S
Fig 17. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 18. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFH5015PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRFH5015PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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