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Número de pieza | EID1516A1-12 | |
Descripción | 15.7-16.3 GHz 12-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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No Preview Available ! UPDATED: 07/12/2007
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EID1516A1-12
15.7-16.3 GHz 12-Watt Internally Matched Power FET
FEATURES
• 15.7-16.3 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41.0 dBm Output Power at 1dB Compression
• 5.5 dB Power Gain at 1dB Compression
• 24% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID1516A1-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 15.7-16.3GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 15.7-16.3GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 15.7-16.3GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 15.7-16.3GHz
Id1dB
Drain Current at 1dB Compression f = 15.7-16.3GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 64 mA
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
TYP
MAX
UNITS
40.0 41.0
dBm
4.5 5.5
dB
±0.6 dB
24
3800
6400
-1.2
2.5
4300
8000
-2.5
2.9
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
220 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
52 W
TCH Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID1516A1-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1516A1-12 | 15.7-16.3 GHz 12-Watt Internally Matched Power FET | Excelics Semiconductor |
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