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PDF EID1415A1-12 Data sheet ( Hoja de datos )

Número de pieza EID1415A1-12
Descripción 14.40-15.35 GHz 12-Watt Internally-Matched Power FET
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EID1415A1-12 Hoja de datos, Descripción, Manual

UPDATED 07/12/2007
www.DataSheet4U.com
EID1415A1-12
14.40-15.35 GHz 12-Watt Internally-Matched Power FET
FEATURES
14.40-15.35 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1415A1-12 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 14.40-15.35GHz
Id1dB
Drain Current at 1dB Compression f = 14.40-15.35GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 60 mA
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
40.0 41.0
dBm
5.0 6.0
dB
±0.6 dB
25 %
3800 4800
mA
6000 8000
mA
-1.2 -2.5
V
2.2 2.5 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007

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