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EID1314A1-5のメーカーはExcelics Semiconductorです、この部品の機能は「13.75-14.50 GHz 5-Watt Internally-Matched Power FET」です。 |
部品番号 | EID1314A1-5 |
| |
部品説明 | 13.75-14.50 GHz 5-Watt Internally-Matched Power FET | ||
メーカ | Excelics Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとEID1314A1-5ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
UPDATED 07/12/2007
www.DataSheet4U.com
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
• 13.75-14.50 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007
1 Page www.DataSheet4U.com
UPDATED 07/12/2007
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
Power De-rating Curve
Power Dissipation vs. Temperature
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Potentially Unsafe
Operating Region
Safe Operating
Region
25 50 75 100 125
Case Temperature (°C)
150
Typical Power Data (VDS = 10 V, IDSQ = 1200 mA)
39
38
37
36
35
34
13.6
P-1dB & G-1dB vs Frequency
11
10
9
8
7
P-1dB (dBm)
G-1dB (dB)
6
13.8 14.0 14.2 14.4 14.6
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised July 2007
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ EID1314A1-5 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
EID1314A1-12 | 13.75-14.50 GHz 12-Watt Internally Matched Power FET | Excelics Semiconductor |
EID1314A1-5 | 13.75-14.50 GHz 5-Watt Internally-Matched Power FET | Excelics Semiconductor |
EID1314A1-8 | 13.75-14.50 GHz 8-Watt Internally-Matched Power FET | Excelics Semiconductor |