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EID1314A1-5 の電気的特性と機能

EID1314A1-5のメーカーはExcelics Semiconductorです、この部品の機能は「13.75-14.50 GHz 5-Watt Internally-Matched Power FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 EID1314A1-5
部品説明 13.75-14.50 GHz 5-Watt Internally-Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 




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EID1314A1-5 Datasheet, EID1314A1-5 PDF,ピン配置, 機能
UPDATED 07/12/2007
www.DataSheet4U.com
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007

1 Page





EID1314A1-5 pdf, ピン配列
www.DataSheet4U.com
UPDATED 07/12/2007
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
Power De-rating Curve
Power Dissipation vs. Temperature
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
Potentially Unsafe
Operating Region
Safe Operating
Region
25 50 75 100 125
Case Temperature (°C)
150
Typical Power Data (VDS = 10 V, IDSQ = 1200 mA)
39
38
37
36
35
34
13.6
P-1dB & G-1dB vs Frequency
11
10
9
8
7
P-1dB (dBm)
G-1dB (dB)
6
13.8 14.0 14.2 14.4 14.6
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised July 2007


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共有リンク

Link :


部品番号部品説明メーカ
EID1314A1-12

13.75-14.50 GHz 12-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor
EID1314A1-5

13.75-14.50 GHz 5-Watt Internally-Matched Power FET

Excelics Semiconductor
Excelics Semiconductor
EID1314A1-8

13.75-14.50 GHz 8-Watt Internally-Matched Power FET

Excelics Semiconductor
Excelics Semiconductor


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