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Número de pieza | EID1314A1-12 | |
Descripción | 13.75-14.50 GHz 12-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EID1314A1-12 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED: 07/12/2007
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EID1314A1-12
13.75–14.50 GHz 12-Watt Internally Matched Power FET
FEATURES
• 13.75-14.50 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41.0 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 23% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID1314A1-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 14.40-15.35GHz
Drain Current at 1dB Compression f = 14.40-15.35GHz
Caution! ESD sensitive device.
MIN TYP MAX UNITS
40.0 41.0
dBm
5.0 6.0
dB
±0.6 dB
23 %
3960 5100
mA
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
5900 8200
mA
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 64 mA
-1.2 -2.5
V
2.5 3.5 oC/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
220 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
35 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EID1314A1-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
EID1314A1-12 | 13.75-14.50 GHz 12-Watt Internally Matched Power FET | Excelics Semiconductor |
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