|
|
PDF EID1112A1-8 Data sheet ( Hoja de datos )
| Número de pieza | EID1112A1-8 | |
| Descripción | 11.70-12.70 GHz 8-Watt Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EID1112A1-8 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
UPDATED 07/12/2007
www.DataSheet4U.com
EID1112A1-8
11.70-12.70 GHz 8-Watt Internally Matched Power FET
FEATURES
• 11.70-12.70 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EID1112A1-8
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IDSS
VP
RTH
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 11.70-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 11.70-12.70GHz
Drain Current at 1dB Compression f = 11.70-12.70GHz
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 40 mA
MIN
38.5
7.0
Notes: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
80 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
32 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
TYP
39.5
8.0
35
2800
4400
-1.2
3.5
MAX
±0.6
3200
5200
-2.5
4.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised July 2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EID1112A1-8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EID1112A1-5 | 11.70-12.70 GHz 5-Watt Internally Matched Power FET | Excelics Semiconductor |
| EID1112A1-8 | 11.70-12.70 GHz 8-Watt Internally Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |