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PDF IXFN520N075T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN520N075T2 | |
| Descripción | TrenchT2 GigaMOS HiperFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
www.DataSheet4U.com
TrenchT2TM GigaMOSTM
HiperFETTM
Power MOSFET
IXFN520N075T2
VDSS =
ID25 =
RDS(on) ≤
75V
480A
1.9mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
75
75
V
V
±20 V
±30 V
480 A
200
1500
A
A
200 A
3J
940 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z 175°C Operating Temperature
z Isolation Voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 100A, Note 1
Characteristic Values
Min.
Typ. Max.
75 V
2.5 5.0 V
±200 nA
25 μA
2 mA
1.5 1.9 mΩ
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters and Off-Line UPS
z Primary-Side Switch
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100193A(11/09)
1 page  
IXFN520N075T2www.DataSheet4U.com
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
180
160 RG = 1Ω , VGS = 10V
VDS = 37.5V
140
120
I D = 200A
100
80
60
I D = 100A
40
20
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
600
t r td(on) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 37.5V
I D = 200A
400
240
200
160
300 120
I D = 100A
200 80
100 40
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
46
180
t f td(off) - - - -
44
RG = 1Ω, VGS = 10V
160
VDS = 37.5V
42 140
40 120
38
TJ = 25ºC
TJ = 125ºC 100
36 80
34 60
32 40
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
180
160 RG = 1Ω , VGS = 10V
VDS = 37.5V
140
120 TJ = 125ºC
100
80
60
40
20 TJ = 25ºC
0
40 60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
44 140
42
t f td(off) - - - -
RG = 1Ω, VGS = 10V
130
40
VDS = 37.5V
120
38
I D = 100A
36
110
100
I D = 200A
34 90
32 80
30 70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
600
t f td(off) - - - -
500 TJ = 125ºC, VGS = 10V
VDS = 37.5V
400 I D = 200A, 100A
300
600
500
400
300
200 200
100 100
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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| PDF Descargar | [ Datasheet IXFN520N075T2.PDF ] | |
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