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PDF IXGH48N60C3C1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH48N60C3C1 | |
| Descripción | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBT for
40 - 100kHz Switching
Preliminary Technical Information
IXGH48N60C3C1
VCES
IC110
VCE(sat)
tfi(typ)
www.DataSheet4U.com
= 600V
= 48A
≤ 2.5V
= 38ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note 1
TJ =
125°C
Maximum Ratings
600
600
V
V
±20 V
±30 V
75 A
48 A
20 A
250 A
30 A
300 mJ
ICM = 100
@ < VCES
300
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
6
°C
°C
Nm/lb.in
g
Characteristic Values
Min.
Typ. Max.
3.0 5.5 V
50 μA
1.75 mA
±100 nA
2.3 2.5 V
1.8 V
TO-247
GC
E
G = Gate
E = Emitter
( TAB )
C = Collector
TAB = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Anti-Parallel Schottky Diode
z Fast Switching
z Avalanche Rated
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100139A(06/09)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.4
Eoff Eon - - - -
2.0 TJ = 125ºC , VGE = 15V
VCE = 400V
1.6
I C = 60A
1.2
2.4
2.0
1.6
1.2
0.8 0.8
0.4
0.0
0
I C = 30A
0.4
0.0
5 10 15 20 25 30 35
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
2.0
1.8 Eoff
Eon - - - -
1.6 RG = 3Ω , VGE = 15V
1.4 VCE = 400V
1.2
1.0 I C = 60A
0.8
0.6
0.4
0.2 I C = 30A
0.0
25 35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160 120
t f i td(off) - - - -
140 RG = 3Ω , VGE = 15V
VCE = 400V
120
110
100
100
80 TJ = 125ºC
90
80
60 70
40 60
TJ = 25ºC
20 50
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60C3C1www.DataSheet4U.com
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
1.8
1.6 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
1.4 VCE = 400V
1.2
1.0
0.8
0.6 TJ = 125ºC
0.4
TJ = 25ºC
0.2
0.0
15 20 25 30 35 40 45 50 55
IC - Amperes
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
140
t f i td(off) - - - -
130 TJ = 125ºC, VGE = 15V
VCE = 400V
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
350
300
250
110
I C = 60A
100 I C = 30A
90
200
150
100
80
0
50
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160 120
140 t f i
td(off) - - - -
RG = 3Ω , VGE = 15V
120 VCE = 400V
110
100
100 I C = 60A
80
I C = 30A
60
90
80
70
40 60
20 50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH48N60C3C1.PDF ] | |
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