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PDF IXGH48N60B3C1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH48N60B3C1 | |
| Descripción | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
Preliminary Technical Information
IXGH48N60B3C1
VCES
IC110
VCE(sat)
tfi(typ)
Medium Speed Low Vsat PT
IGBT 5 - 40 kHz Switching
TO-247
www.DataSheet4U.com
= 600V
= 48A
≤ 1.8V
= 116ns
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
IICC12150
IF110
ICM
SSOA
(RBSOA)
TTCC
=
=
25°C (Limited
110°C
by
Leads)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque
Maximum Ratings
600
600
± 20
± 30
V
V
V
V
75
48
20
280
ICM = 120
@ ≤ VCES
300
A
A
A
A
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 32A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
50 μA
1.75 mA
±100 nA
1.8 V
GC
E
( TAB )
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Anti-Parallel Schottky Diode
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100140A(06/09)
1 page  
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
6
Eoff Eon - - - -
5 TJ = 125ºC , VGE = 15V
VCE = 480V
4
I C = 60A
3
3.0
2.5
2.0
1.5
2 I C = 30A
1.0
1 0.5
I C = 15A
0 0.0
5 10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
4.0
3.6 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
3.2 VCE = 480V
2.8
I C = 60A
2.4
2.0
1.6
1.2 I C = 30A
0.8
I C = 15A
0.4
0.0
25 35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
125
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
220 240
200 t f i td(off) - - - -
RG = 5Ω , VGE = 15V
180 VCE = 480V
220
200
160 TJ = 125ºC
180
140 160
120 140
TJ = 25ºC
100 120
80 100
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60B3C1www.DataSheet4U.com
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
3.5
3.0 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
2.5 VCE = 480V
3.5
3.0
2.5
2.0 2.0
1.5
TJ = 125ºC
1.0
0.5
TJ = 25ºC
1.5
1.0
0.5
0.0 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
220
210
200
190
180
170
160
150
140
130
120
5
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
t f i td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
650
600
550
500
450
I C = 60A
400
350
I C = 15A
I C = 30A
300
250
200
150
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
200 220
190 t f i
td(off) - - - -
180 RG = 5Ω , VGE = 15V
VCE = 480V
170
210
200
190
160 I C = 60A, 15A
150
180
170
140
130 I C = 30A
160
150
120 140
110
I C = 60A, 15A
130
100 120
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH48N60B3C1.PDF ] | |
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