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PDF IXGH36N60B3C1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH36N60B3C1 | |
| Descripción | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
Medium Speed Low Vsat PT
IGBT for 5 - 40kHz Switching
IXGH36N60B3C1
VCES
IC110
VCE(sat)
tfi(typ)
TO-247
www.DataSheet4U.com
= 600V
= 36A
≤ 1.8V
= 100ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Limited by Leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10 seconds
Plastic Body for 10 seconds
Mounting Torque
Maximum Ratings
600
600
V
V
± 20 V
± 30 V
75 A
36 A
20 A
200 A
ICM = 80
@ ≤ VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ =125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
3.0 5.0
35
1.25
±100
1.5 1.8
V
μA
mA
nA
V
GC E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z Anti-Parallel Schottky Diode
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2009 IXYS CORPORATION, All Rights Reserved
DS100141A(06/09)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
7
6
Eoff Eon - - - -
TJ = 125ºC , VGE = 15V
5 VCE = 400V
I C = 60A
4
2.8
2.4
2.0
1.6
3 1.2
I C = 30A
2 0.8
1 0.4
I C = 15A
0 0.0
0 10 20 30 40 50 60 70 80 90 100 110 120
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
3.6 Eoff
Eon - - - -
3.2 RG = 5Ω , VGE = 15V
VCE = 400V
2.8
2.4
I C = 60A
2.0
1.6
1.2 I C = 30A
0.8
I C = 15A
0.4
0.0
25 35 45 55 65 75 85 95 105 115
TJ - Degrees Centigrade
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
350 220
300
t f i td(off) - - - -
RG = 5Ω , VGE = 15V
200
250
VCE = 400V
180
200 TJ = 125ºC
160
150 140
100 TJ = 25ºC
50
120
100
0 80
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH36N60B3C1www.DataSheet4U.com
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.8
Eoff Eon - - - -
4.0 RG = 5Ω , VGE = 15V
VCE = 400V
3.2
2.4 TJ = 125ºC, 25ºC
1.8
1.5
1.2
0.9
1.6 0.6
0.8 0.3
0.0 0.0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs. Gate
Resistance
320 1100
300 t f i
td(off) - - - -
280 TJ = 125ºC, VGE = 15V
VCE = 400V
260
1000
900
800
240 700
220
I C = 15A, 30A, 60A
600
200 500
180 400
160 300
140 200
120
0
100
10 20 30 40 50 60 70 80 90 100 110 120
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
240 230
220 t f i
td(off) - - - -
RG = 5Ω , VGE = 15V
200 VCE = 400V
210
190
180
I C = 30A
160
I C = 60A
140
120 I C = 15A
170
150
130
110
100 90
80 70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
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| PDF Descargar | [ Datasheet IXGH36N60B3C1.PDF ] | |
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