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IXGH30N60C3C1のメーカーはIXYSです、この部品の機能は「GenX3 600V IGBT w/ SiC Anti-Parallel Diode」です。 |
部品番号 | IXGH30N60C3C1 |
| |
部品説明 | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXGH30N60C3C1ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBTs for
40 - 100kHz Switching
Preliminary Technical Information
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
≤
=
3.0V
47ns
TO-263 (IXGA)
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
110°C
110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
600
600
± 20
± 30
V
V
V
V
60
30
13
150
ICM = 60
@ ≤ VCES
220
A
A
A
A
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
2.5
3.0
6.0
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min.
Typ. Max.
3.5 5.5 V
25 μA
300 μA
±100 nA
2.6 3.0 V
1.8 V
© 2009 IXYS CORPORATION, All Rights Reserved
G
E
TO-220 (IXGP)
C (TAB)
GCE
C (TAB)
TO-247 (IXGH)
G
CE
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100142A(06/09)
1 Page TO-263 (IXGA) Outline
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
TO-220 (IXGP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-247 (IXTH) Outline
123
∅P
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
© 2009 IXYS CORPORATION, All Rights Reserved
3Pages IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.9
0.8 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
0.7 VCE = 300V
0.6
I C = 40A
0.5
0.4
0.3
I C = 20A
0.2
0.1
4 6 8 10 12 14 16 18
RG - Ohms
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
20
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.6
Eoff Eon - - - -
0.5 RG = 5Ω , VGE = 15V
VCE = 300V
0.4
TJ = 125ºC
0.3
TJ = 25ºC
0.2
0.1
0.0
10 15 20 25 30 35
IC - Amperes
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.8
0.7 Eoff
Eon - - - -
RG = 5Ω , VGE = 15V
0.6 VCE = 300V
0.5
I C = 40A
0.4
0.8
0.7
0.6
0.5
0.4
0.3 0.3
0.2
I C = 20A
0.2
0.1 0.1
0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
180
170 t f i
td(off) - - - -
160 TJ = 125ºC, VGE = 15V
150 VCE = 300V
140
130 I C = 40A
120
110
100 I C = 20A
90
80
4 6 8 10 12 14 16 18
RG - Ohms
140
130
120
110
100
90
80
70
60
50
40
20
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
180
160 t f i
td(off) - - - -
RG = 5Ω , VGE = 15V
140 VCE = 300V
120
TJ = 125ºC
100
80
60
40
TJ = 25ºC
20
110
100
90
80
70
60
50
40
30
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
160
140 t f i
td(off) - - - -
RG = 5Ω , VGE = 15V
120 VCE = 300V
100
I C = 40A, 20A
80
60
40
90
80
70
60
50
40
30
0 20
10 15 20 25 30 35 40
IC - Amperes
20 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IXGH30N60C3C1 | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | IXYS |