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PDF IXGA30N60C3C1 Data sheet ( Hoja de datos )
| Número de pieza | IXGA30N60C3C1 | |
| Descripción | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
High Speed PT IGBTs for
40 - 100kHz Switching
Preliminary Technical Information
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
≤
=
3.0V
47ns
TO-263 (IXGA)
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
110°C
110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Maximum Ratings
600
600
± 20
± 30
V
V
V
V
60
30
13
150
ICM = 60
@ ≤ VCES
220
A
A
A
A
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
2.5
3.0
6.0
°C
°C
Nm/lb.in.
g
g
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min.
Typ. Max.
3.5 5.5 V
25 μA
300 μA
±100 nA
2.6 3.0 V
1.8 V
© 2009 IXYS CORPORATION, All Rights Reserved
G
E
TO-220 (IXGP)
C (TAB)
GCE
C (TAB)
TO-247 (IXGH)
G
CE
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100142A(06/09)
1 page  
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 7. Transconductance
24
TJ = - 40ºC
20
25ºC
16
125ºC
12
8
4
0
0 10 20 30 40 50 60 70 80
IC - Amperes
Fig. 8. Gate Charge
16
14 VCE = 300V
I C = 20A
12 I G = 10 mA
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40
QG - NanoCoulombs
10,000
f = 1 MHz
1,000
Fig. 9. Capacitance
Cies
Fig. 10. Reverse-Bias Safe Operating Area
70
60
50
40
100
10
0
1.00
Coes
Cres
5 10 15 20 25 30 35 40
VCE - Volts
30
20
TJ = 125ºC
10
RG = 5Ω
dV / dt < 10V / ns
0
100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance for IGBT
0.10
0.01
0.00001
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: G_30N60C3C1(4D)6-03-09
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGA30N60C3C1.PDF ] | |
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