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PDF IXFX360N15T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFX360N15T2 | |
| Descripción | GigaMOS TrenchT2 HiperFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N15T2
IXFX360N15T2
VDSS =
ID25 =
RDS(on) ≤
trr ≤
150V
360A
4.0mΩ
150ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
dV/dt
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
360 A
160 A
900 A
100
TBD
A
J
1670
W
20 V/ns
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
150 V
2.5 5.0 V
± 200 nA
50 μA
5 mA
4.0 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Synchronous Recification
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100181(08/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
340
RG = 1Ω , VGS = 10V
300 VDS = 75V
260 I D = 100A
220
180
140 I D = 200A
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
700
t r td(on) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 75V
500
I D = 200A
400
300
200 I D = 100A
100
0
123456789
RG - Ohms
210
180
150
120
90
60
30
0
10
700
600
500
400
300
200
100
0
40
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 75V
240
220
200
TJ = 125ºC
180
160
TJ = 25ºC
140
120
100
60 80 100 120 140 160 180 200
ID - Amperes
IXwFwKw.D3at6aS0heNet4U1.c5omT2
IXFX360N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
300
RG = 1Ω , VGS = 10V
260 VDS = 75V
220
180 TJ = 25ºC
140 TJ = 125ºC
100
60
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
700
t f td(off) - - - -
600 RG = 1Ω, VGS = 10V
VDS = 75V
500
220
200
180
400
I D = 200A
300
I D = 100A
160
140
200 120
100 100
0 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
900
800 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
700 VDS = 75V
600 I D = 200A, 100A
500
400
300
200
100
123456789
RG - Ohms
900
800
700
600
500
400
300
200
100
10
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFX360N15T2.PDF ] | |
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