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IXFX160N30T の電気的特性と機能

IXFX160N30TのメーカーはIXYSです、この部品の機能は「GigaMOS Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFX160N30T
部品説明 GigaMOS Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFX160N30T Datasheet, IXFX160N30T PDF,ピン配置, 機能
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK160N30T
IXFX160N30T
VDSS =
ID25 =
RDS(on)
trr
300V
160A
19m
200ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1M
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
300
300
V
V
± 20 V
± 30 V
160 A
440 A
40 A
3J
20 V/ns
1390
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in.
N/lb.
10 g
6g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
300 V
2.5 5.0 V
± 200 nA
50 µA
3 mA
19 m
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All rights reserved
DS100127(03/09)

1 Page





IXFX160N30T pdf, ピン配列
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
7V
6V
5.5V
5V
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VDS - Volts
3.2
160
140
120
100
80
60
40
20
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5V
123456
VDS - Volts
7
Fig. 5. RDS(on) Normalized to ID = 80A Value
vs. Drain Current
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0 TJ = 25ºC
0.8
0.6
0
40 80 120 160 200 240 280
ID - Amperes
© 2009 IXYS CORPORATION, All rights reserved
IwXwwF.DKata1Sh6ee0t4UN.co3m0T
IXFX160N30T
Fig. 2. Extended Output Characteristics
@ 25ºC
300
VGS = 10V
7V
250
200
6V
150
5.5V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 80A Value
vs. Junction Temperature
2.8
2.6 VGS = 10V
2.4
2.2
2.0 I D = 160A
1.8 I D = 80A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150


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部品番号部品説明メーカ
IXFX160N30T

GigaMOS Power MOSFET

IXYS
IXYS
IXFX160N30T

GigaMOS Power MOSFET

IXYS
IXYS


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