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PDF IXFN26N90 Data sheet ( Hoja de datos )
| Número de pieza | IXFN26N90 | |
| Descripción | HiPerFET Power MOSFETs Single Die MOSFET | |
| Fabricantes | IXYS | |
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HiPerFETTM Power MOSFETs
Single Die MOSFET
IXFN 26N90
IXFN 25N90
VDSS
900 V
900 V
ID (cont)
26 A
25 A
RDS(on)
0.30 W
0.33 W
trr
250 ns
250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
D
G
Preliminary data sheet
S
S
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TJ
VISOL
Md
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL£ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
26N90
25N90
26N90
25N90
26N90
25N90
900 V
900 V
±20 V
±30 V
26 A
25
104 A
100
26 A
25
64 mJ
3J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Weight
30 g
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GH(th)
IGSS
IDSS
RDS(on)
V = 0 V, I = 3 mA
GS D
V = V , I = 8 mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900
3.0
26N90
25N90
V
5.0 V
±200 nA
100 mA
2 mA
0.30 W
0.33 W
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97526E (10/99)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN26N90.PDF ] | |
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