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IXFN240N15T2のメーカーはIXYSです、この部品の機能は「GigaMOS TrenchT2 HiperFET Power MOSFET」です。 |
部品番号 | IXFN240N15T2 |
| |
部品説明 | GigaMOS TrenchT2 HiperFET Power MOSFET | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXFN240N15T2ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN240N15T2
VDSS =
ID25 =
RDS(on) ≤
trr ≤
150V
240A
5.2mΩ
140ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
150
150
V
V
±20 V
±30 V
240 A
200 A
600 A
120 A
2J
20 V/ns
830 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
150 V
2.5 5.0 V
±200 nA
25 μA
3 mA
4.1 5.2 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100192(09/09)
1 Page Fig. 1. Output Characteristics
@ TJ = 25ºC
240
VGS = 15V
10V
200 8V
7V
160
6V
120
80
40
0
0.0
240
200
160
120
80
5.5V
5V
0.2 0.4 0.6 0.8 1.0
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
VGS = 15V
10V
8V
7V
6V
5V
1.2
40
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 120A Value
vs. Drain Current
3.4
VGS = 10V
3.0
2.6 TJ = 175ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
40 80 120 160 200 240 280 320 360
ID - Amperes
IXFN240N15T2www.DataSheet4U.com
400
350
300
250
200
150
100
50
0
0
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
VGS = 10V
8V
7V
6V
5.5V
5V
123456789
VDS - Volts
10
Fig. 4. RDS(on) Normalized to ID = 120A Value
vs. Junction Temperature
3.0
VGS = 10V
2.6
2.2 I D = 240A
I D = 120A
1.8
1.4
1.0
0.6
0.2
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
220
200
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
3Pages IXFN240N15T2www.DataSheet4U.com
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.300
.sadgsfgsf
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_240N15T2 (8V)9-14-09
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXFN240N15T2 | GigaMOS TrenchT2 HiperFET Power MOSFET | IXYS |