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IXFN230N20TのメーカーはIXYSです、この部品の機能は「GigaMOS Power MOSFET」です。 |
部品番号 | IXFN230N20T |
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部品説明 | GigaMOS Power MOSFET | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXFN230N20Tダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN230N20T
VDSS =
ID25 =
RDS(on) ≤
trr ≤
200V
230A
7.5mΩ
200ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
200
200
V
V
±20 V
±30 V
220 A
200 A
630 A
100 A
3J
20 V/ns
1090
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
200 V
2.5 5.0 V
±200 nA
50 µA
3 mA
7.5 mΩ
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100134(03/09)
1 Page 240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 15V
10V
7V
6V
5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS - Volts
1.6
Fig. 3. Output Characteristics
@ 150ºC
240
220
VGS = 15V
10V
200 8V
7V
180
160 6V
140
120
100
80
60 5V
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 115A Value
vs. Drain Current
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
VGS = 10V
50 100
150 200
ID - Amperes
TJ = 175ºC
TJ = 25ºC
250 300 350
© 2009 IXYS CORPORATION, All Rights Reserved
IXFN230N20Twww.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
350
VGS = 15V
300 10V
250
7V
200
150 6V
100
50
5V
0
0123456789
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 115A Value
vs. Junction Temperature
3.0
2.8 VGS = 10V
2.6
2.4
2.2 I D = 230A
2.0 I D = 115A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
220
200
External Lead Current Limit
180
160
140
120
100
80
60
40
20
0
-50
-25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFN230N20T | GigaMOS Power MOSFET | IXYS |