|
|
Número de pieza | IXFN180N25T | |
Descripción | GigaMOS Power MOSFET | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN180N25T (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advance Technical Information
www.DataSheet4U.com
GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN180N25T
VDSS =
ID25 =
RDS(on) ≤
trr ≤
250V
155A
12.9mΩ
200ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
250
250
V
V
±20 V
±30 V
164 A
500 A
40 A
3J
20 V/ns
900 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
250 V
2.5 5.0 V
±200 nA
50 µA
3 mA
12.9 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Isolation voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100130(03/09)
1 page 1.000
0.100
0.010
0.001
0.00001
IXFN180N25Twww.DataSheet4U.com
Fig. 13. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_180N25T (9E)03-23-09
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFN180N25T.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFN180N25T | GigaMOS Power MOSFET | IXYS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |