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IXFN180N15P の電気的特性と機能

IXFN180N15PのメーカーはIXYSです、この部品の機能は「PolarHT HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN180N15P
部品説明 PolarHT HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFN180N15P Datasheet, IXFN180N15P PDF,ピン配置, 機能
www.DataSheet4U.com
PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 180N15P
VDSS
ID25
=
=
RDS(on)
trr
150 V
150 A
11 m
200 ns
Symbol
VDSS
VDGR
VDSS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
VISOL
TL
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
Mounting torque
Terminal connection torque (M4)
50/60 Hz
t = 1 min
IISOL 1 mA
t=1s
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
150 V
150 V
±20 V
±30 V
150 A
100 A
380 A
60 A
100 mJ
4J
10 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
680 W
-55 ... +175
175
-55 ... +150
1.5/13
1.5/13
2500
3000
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
V~
V~
300 °C
30 g
Features
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 4 mA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS, VGS = 0 V
TJ = 150° C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 90 A
Pulse test, t 300 µs, duty cycle d 2 %
11 m
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99241E(01/06)

1 Page





IXFN180N15P pdf, ピン配列
180
160
140
120
100
80
60
40
20
0
0
180
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characte r is tics
@ 25ºC
VGS = 10V
9V
8V
7V
6
0.4 0.8 1.2
V D S - V olts
1.6
Fig. 3. Output Characte r is tics
@ 150ºC
VGS = 10V
9V
8
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5
V D S - V olts
2
4
Fig. 5. RDS(on) Nor m alize d to ID = 90A
V alue vs . Dr ain Cur re nt
3.4
3.1 TJ = 175ºC
2.8
2.5
2.2
VGS = 10V
1.9
VGS = 15V
1.6
1.3 TJ = 25ºC
1
0.7
0
50 100 150 200 250 300 350
I D - A mperes
© 2006 IXYS All rights reserved
IXFN 180N15Pwww.DataSheet4U.com
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
320
VGS = 10V
280
9V
240
200
8V
160
120
80 7V
40
6V
0
0 1 2 3 V4 D S 5- V o6lts 7 8 9 10
Fig. 4. RDS(on) Nor m alize d to ID = 90A
V alue vs . Junction Te m pe rature
2.8
2.6 VGS = 10V
2.4
2.2
2
1.8 ID = 180A
1.6
1.4 ID = 90A
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
120
External Lead Current Limit
100
80
60
40
20
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFN180N15P

PolarHT HiPerFET Power MOSFET

IXYS
IXYS


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