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PDF IXFN180N07 Data sheet ( Hoja de datos )
| Número de pieza | IXFN180N07 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
www.DataSheet4U.com
IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
VDSS
60 V
70 V
70 V
ID25
200 A
180 A
200 A
RDS(on)
6 mW
7 mW
6 mW
trr £ 250 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
N07 70 V
N06 60 V
N07 70 V
N06 60 V
VGS
V
GSM
ID25
IL(RMS)
Continuous
Transient
TC= 25°C; Chip capability
Terminal current limit
±20 V
±30 V
200N06/200N07 200 A
180N07
180 A
100 A
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
VISOL
Md
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
50/60 Hz, RMS
IISOL £ 1 mA
Mounting torque
Terminal connection torque
t = 1 min
t=1s
600 A
100 A
30 mJ
2J
5 V/ns
520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
Weight
30 g
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
DSS
VGS (th)
IGSS
IDSS
RDS(on)
V = 0 V, I = 1 mA
GS D
N06 60
N07 70
VDS = VGS, ID = 8 mA
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
T
J
=
125°C
TJ = 25°C
VGS = 10 V, ID = 0.5 • ID25
200N06/200N07
Pulse test, t £ 300 ms, duty cycle d £ 2 % 180N07
V
V
4V
±200 nA
400 mA
2 mA
6 mW
7 mW
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97533A (9/99)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN180N07.PDF ] | |
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