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IXFN36N60 の電気的特性と機能

IXFN36N60のメーカーはIXYSです、この部品の機能は「HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN36N60
部品説明 HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFN36N60 Datasheet, IXFN36N60 PDF,ピン配置, 機能
Preliminary Data
HiPerFETTMPower MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60www.DataSheet4U.com
VDSS
IXFK/FN 36N60 600V
IXFK/FN 32N60 600V
ID25
36A
32A
RDS(on)
0.18
0.25
trr
250ns
250ns
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
VGS
V
GSM
ID25
I
DM
IAR
E
AR
dv/dt
PD
T
J
T
JM
Tstg
T
L
VISOL
M
d
Weight
Test Conditions
Maximum Ratings
IXFK IXFN
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
600 600
600 600
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
32N60 32
36N60 36
32N60 128
36N60 144
20
T
C
= 25°C
30
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
5
TC = 25°C
500
-55 ...
-55 ...
32
36
128
144
20
30
5
520
+150
150
+150
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300 -
°C
50/60 Hz, RMSt = 1 min
IISOL 1 mAt = 1 s
Mounting torque
Terminal connection torque
- 2500
- 3000
V~
V~
0.9/6 1.5/13 Nm/lb.in.
- 1.5/13 Nm/lb.in.
10 30
g
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
Features
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
Min. Typ. Max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
600
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
36N60
GS D D25
Pulse test, t 300 µs, duty cycle 2 % 32N60
V
4.5 V
±200 nA
400 µA
2 mA
0.18
0.25
I©X1Y9S96reIsXeYrvSeCsothrpeorrigahtiot tno. cAhlal rnighetlsimreitsse, rtveesdt c. onditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
92807G (01/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629

1 Page





IXFN36N60 pdf, ピン配列
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60www.DataSheet4U.com
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629


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部品番号部品説明メーカ
IXFN36N60

HiPerFET Power MOSFET

IXYS
IXYS


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