|
|
PDF IXFK32N60 Data sheet ( Hoja de datos )
| Número de pieza | IXFK32N60 | |
| Descripción | HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFK32N60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Preliminary Data
HiPerFETTMPower MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60www.DataSheet4U.com
VDSS
IXFK/FN 36N60 600V
IXFK/FN 32N60 600V
ID25
36A
32A
RDS(on)
0.18Ω
0.25Ω
trr
250ns
250ns
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
VGS
V
GSM
ID25
I
DM
IAR
E
AR
dv/dt
PD
T
J
T
JM
Tstg
T
L
VISOL
M
d
Weight
Test Conditions
Maximum Ratings
IXFK IXFN
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
600 600
600 600
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
32N60 32
36N60 36
32N60 128
36N60 144
20
T
C
= 25°C
30
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
TC = 25°C
500
-55 ...
-55 ...
32
36
128
144
20
30
5
520
+150
150
+150
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300 -
°C
50/60 Hz, RMSt = 1 min
IISOL ≤ 1 mAt = 1 s
Mounting torque
Terminal connection torque
- 2500
- 3000
V~
V~
0.9/6 1.5/13 Nm/lb.in.
- 1.5/13 Nm/lb.in.
10 30
g
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
Min. Typ. Max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
600
2
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
36N60
GS D D25
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60
V
4.5 V
±200 nA
400 µA
2 mA
0.18 Ω
0.25 Ω
I©X1Y9S96reIsXeYrvSeCsothrpeorrigahtiot tno. cAhlal rnighetlsimreitsse, rtveesdt c. onditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
92807G (01/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK32N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFK32N60 | HiPerFET Power MOSFET | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |