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PDF EMP312 Data sheet ( Hoja de datos )
| Número de pieza | EMP312 | |
| Descripción | 21.0 - 24.0 GHz Power Amplifier MMIC | |
| Fabricantes | Excelics Semiconductor | |
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www.DataSheet4U.com
UPDATED 04/04/2008
EMP312
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
• 21.0 – 24.0 GHz Operating Frequency Range
• 28.5dBm Output Power at 1dB Compression
• 13.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2140um X 2650um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=760mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F Operating Frequency Range
21.0
24.0
P1dB
Output Power at 1dB Gain Compression
27.0
28.5
Gss
OIMD3
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
10.0
13.0
-40
-37
Input RL Input Return Loss
-15 -10
Output RL Output Return Loss
-15 -10
Idss
VDD
Rth
Saturate Drain Current
Power Supply Voltage
VDS =3V, VGS =0V
Thermal Resistance (Au-Sn Eutectic Attach)
858
1072
1288
78
8
Tb Operating Base Plate Temperature
-35 +85
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
oC/W
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
8V
VGS Gate to Source Voltage
-4 V
IDD Drain Current
Idss
IGSF Forward Gate Current
15mA
PIN Input Power
@ 3dB compression
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT Total Power Dissipation
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised April 2008
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EMP312.PDF ] | |
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