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PDF STH260N6F6-2 Data sheet ( Hoja de datos )

Número de pieza STH260N6F6-2
Descripción H2PAK-2 STripFET DeepGATE VI Power MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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Features
STH260N6F6-2
STP260N6F6
N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2
STripFET™ DeepGATE™ VI Power MOSFET
Preliminary data
Type
STH260N6F6-2
STP260N6F6
VDSS
60 V
60 V
RDS(on) max
< 0.002 Ω
< 0.003 Ω
ID
180 A
120 A
N-channel enhancement mode
100% avalanched rated
Low gate charge
Very low on-resistance
Application
Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
3
2
1
H2PAK-2
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STH260N6F6-2
STP260N6F6
Marking
260N6F6
260N6F6
Package
H2PAK-2
TO-220
Packaging
Tape and reel
Tube
May 2010
Doc ID 17467 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
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STH260N6F6-2 pdf
STH260N6F6-2, STP260N6F6
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Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
VSD (2) Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
For TO-220
For H2PAK-2
TO-220
H2PAK-2
For TO-220
ISD = 120 A, VGS = 0
For H2PAK-2
ISD = 180 A, VGS = 0
ISD = 120 A, VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 4)
-
-
-
-
-
-
120 A
180 A
480 A
720 A
TBD V
TBD
TBD
TBD
ns
nC
A
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17467 Rev 1
5/12

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STH260N6F6-2 arduino
STH260N6F6-2, STP260N6F6
5 Revision history
Table 9. Document revision history
Date
Revision
07-May-2010
1 First release.
www.DataSheet4U.com
Revision history
Changes
Doc ID 17467 Rev 1
11/12

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