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BLF7G27LS-140のメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。 |
部品番号 | BLF7G27LS-140 |
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部品説明 | Power LDMOS transistor | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBLF7G27LS-140ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
BLF7G27L-140;
BLF7G27LS-140
Power LDMOS transistor
Rev. 01 — 27 May 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR885k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
IS-95
2500 to 2700 1300 28 20
17.0 22 −45[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
1 Page NXP Semiconductors
www.DataSheet4U.com
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IDSX drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 1 mA
VDS = 10 V; ID = 216 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 7.56 A
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
Min Typ Max Unit
65 -
-V
1.5 1.8 2.3 V
--
5 μA
- <tbd> - A
--
500 nA
- <tbd> - S
- <tbd> - Ω
7. Test information
Table 7. Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1 = 2600 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 1300 mA;
Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(AV)
average output power
- 20 - W
Gp
RLin
ηD
ACPR885k
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
- 17.0 -
- −10 -
- 22 -
- −45 -
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF7G27L-140 and BLF7G27LS-140 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2500 MHz.
BLF7G27L-140_7G27LS-140_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 May 2010
© NXP B.V. 2010. All rights reserved.
3 of 9
3Pages NXP Semiconductors
www.DataSheet4U.com
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
9. Abbreviations
Table 8. Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW Continuous Wave
IS-95
Interim Standard 95
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR
Voltage Standing Wave Ratio
10. Revision history
Table 9. Revision history
Document ID
BLF7G27L-140_7G27LS-140_1
Release date Data sheet status
20100527
Objective data sheet
Change notice
-
Supersedes
-
BLF7G27L-140_7G27LS-140_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 May 2010
© NXP B.V. 2010. All rights reserved.
6 of 9
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部品番号 | 部品説明 | メーカ |
BLF7G27LS-140 | Power LDMOS transistor | NXP Semiconductors |