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BLF7G27LS-140 の電気的特性と機能

BLF7G27LS-140のメーカーはNXP Semiconductorsです、この部品の機能は「Power LDMOS transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 BLF7G27LS-140
部品説明 Power LDMOS transistor
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BLF7G27LS-140 Datasheet, BLF7G27LS-140 PDF,ピン配置, 機能
BLF7G27L-140;
BLF7G27LS-140
Power LDMOS transistor
Rev. 01 — 27 May 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
ηD ACPR885k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
IS-95
2500 to 2700 1300 28 20
17.0 22 45[1]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
„ Excellent ruggedness
„ High efficiency
„ Low Rth providing excellent thermal stability
„ Designed for low memory effects providing excellent digital pre-distortion capability
„ Internally matched for ease of use
„ Integrated ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

1 Page





BLF7G27LS-140 pdf, ピン配列
NXP Semiconductors
www.DataSheet4U.com
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IDSX drain cut-off current
IGSS
gfs
RDS(on)
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
VGS = 0 V; ID = 1 mA
VDS = 10 V; ID = 216 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 7.56 A
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
Min Typ Max Unit
65 -
-V
1.5 1.8 2.3 V
--
5 μA
- <tbd> - A
--
500 nA
- <tbd> - S
- <tbd> - Ω
7. Test information
Table 7. Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1 = 2600 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 1300 mA;
Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
Min Typ Max Unit
PL(AV)
average output power
- 20 - W
Gp
RLin
ηD
ACPR885k
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
- 17.0 -
- 10 -
- 22 -
- 45 -
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF7G27L-140 and BLF7G27LS-140 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2500 MHz.
BLF7G27L-140_7G27LS-140_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 May 2010
© NXP B.V. 2010. All rights reserved.
3 of 9


3Pages


BLF7G27LS-140 電子部品, 半導体
NXP Semiconductors
www.DataSheet4U.com
BLF7G27L-140; BLF7G27LS-140
Power LDMOS transistor
9. Abbreviations
Table 8. Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW Continuous Wave
IS-95
Interim Standard 95
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR
Voltage Standing Wave Ratio
10. Revision history
Table 9. Revision history
Document ID
BLF7G27L-140_7G27LS-140_1
Release date Data sheet status
20100527
Objective data sheet
Change notice
-
Supersedes
-
BLF7G27L-140_7G27LS-140_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 May 2010
© NXP B.V. 2010. All rights reserved.
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部品番号部品説明メーカ
BLF7G27LS-140

Power LDMOS transistor

NXP Semiconductors
NXP Semiconductors


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