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PDF BF1215 Data sheet ( Hoja de datos )
| Número de pieza | BF1215 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1215
Dual N-channel dual gate MOSFET
Rev. 01 — 6 May 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source
lead, shared gate2 lead and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage surges. The transistor is
availiable as a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package; one with full internal bias
and one with partial internal bias
Superior cross modulation performance during AGC
High forward transfer admittance to input capacitance ratio
Suitable for VHF and UHF applications: both amplifiers are optimized for VHF
applications.
Internal switch reduces external components
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply
Digital and analog television tuners
Professional communication equipment
1 page  
NXP Semiconductors
www.DataSheet4U.com
BF1215
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
Table 8. Dynamic characteristics for amplifier A and B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance f = 100 MHz; Tj = 25 °C
input capacitance at gate1 f = 100 MHz
input capacitance at gate2 f = 100 MHz
output capacitance
f = 100 MHz
reverse transfer capacitance f = 100 MHz
transducer power gain
noise figure
cross modulation
amplifier A: BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
amplifier B: BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1] Calculated from S-parameters.
[2] Measured in Figure 32 and Figure 33 test circuits.
Min Typ Max Unit
23 27 38 mS
[1] -
2.5 -
pF
[1] -
2.5 -
pF
[1] -
0.8 -
pF
[1] -
27 -
fF
[1]
30 34 38 dB
26 30 34 dB
22 26 30 dB
[1]
30
26
22
-
-
-
[2]
34 38
31 34
26 30
-6
1.5 -
1.9 -
dB
dB
dB
dB
dB
dB
95 104 -
- 100 -
- 104 -
105 107 -
dBμV
dBμV
dBμV
dBμV
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
5 of 22
5 Page 
NXP Semiconductors
www.DataSheet4U.com
BF1215
Dual N-channel dual gate MOSFET
8.4 Graphics for amplifier B
30
ID
(mA)
20
10
001aal562
(1)
(2)
(3)
(4) (5)
(6)
(7)
0
0 0.5 1.0 1.5 2.0 2.5
VG1-S (V)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 16. Amplifier B transfer characteristics;
typical values
30 001aal563
ID
(mA)
20 (1)
(2)
(3)
(4)
10 (5)
(6)
(7)
(8)
(9)
0
0246
VDS (V)
(1) VG1-S(B) = 1.9 V.
(2) VG1-S(B) = 1.8 V.
(3) VG1-S(B) = 1.7 V.
(4) VG1-S(B) = 1.6 V.
(5) VG1-S(B) = 1.5 V.
(6) VG1-S(B) = 1.4 V.
(7) VG1-S(B) = 1.3 V.
(8) VG1-S(B) = 1.2 V.
(9) VG1-S(B) = 1.1 V.
VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 °C.
Fig 17. Amplifier B output characteristics;
typical values
BF1215_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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