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IXKC25N80C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKC25N80C
部品説明 Power MOSFET ISOPLUS220
メーカ IXYS
ロゴ IXYS ロゴ 



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IXKC25N80C Datasheet, IXKC25N80C PDF,ピン配置, 機能
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Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
Low RDS(on), High Voltage, CoolMOSTM
Superjunction MOSFET
Preliminary Data Sheet
IXKC 25N80C
VDSS
ID25
RDS(on)
= 800 V
= 20 A
= 150 m
Symbol
Test Conditions
VDSS
VGS
VGSM
ID25
ID90
ID(RMS)
EAS
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
TC = 90°C
Package lead current limit
Io = 10A, TC = 25°C
Io = 20A
VdIDRS/dt<=V1D0SS0, IAF /≤µs17 A, TVJ = 150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
Maximum Ratings
800 V
±20 V
±30 V
20 A
14 A
45 A
690 mJ
0.5 mJ
6 V/ns
ISOPLUS220TM
E153432
G
DS
G = Gate,
S = Source
D = Drain,
140 W
-55 ... +150
150
-55 ... +125
°C
°C
°C
300 °C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
3g
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMos power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<30pF)
Symbol
RDS(on)
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
VGS = 10 V, ID = ID90, Note 1
VGS = 10 V, ID = ID90, Note 1 TJ = 125°C
136 150 m
280 m
Applications
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
z Inductive Heating
VGS(th)
IDSS
IGSS
VDS = VGS, ID = 2 mA
VDS = VDSS
VGS = 0 V
VGS = ±20 VDC, VDS = 0
TJ = 25°C
TJ = 125°C
2 4V
Advantages
50 µA
10 µA z Easy assembly: no screws or isolation
foils required
±200
nA
z Space savings
z High power density
© 2004 IXYS All rights reserved
CoolMos is a trademark of Infineon
Technology.
DS98866C(02/04)

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