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IXGR50N60C2D1 の電気的特性と機能

IXGR50N60C2D1のメーカーはIXYSです、この部品の機能は「HiPerFAST IGBT with Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGR50N60C2D1
部品説明 HiPerFAST IGBT with Diode
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGR50N60C2D1 Datasheet, IXGR50N60C2D1 PDF,ピン配置, 機能
www.DataSheet4U.com
HiPerFASTTM
IGBT with Diode
IXGR 50N60C2
IXGR 50N60C2D1
C2-Class High Speed IGBTs
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.7 V
= 48 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
VISOL
TJ
TJM
Tstg
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
TC = 25°C
50/60 Hz RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
36 A
300 A
ICM = 100
A
200
2500
-55 ... +150
150
-55 ... +150
5
300
W
V
°C
°C
°C
g
°C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
650 µA
5 mA
±100 nA
TJ = 25°C
TJ = 125°C
2.7
1.8
V
V
ISOPLUS247
(IXGR)
(ISOLATED TAB)
G = Gate
C = Collector
E = Emitter
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99163(04/04)

1 Page





IXGR50N60C2D1 pdf, ピン配列
Fig. 1. Output Characte ristics
@ 25 Deg. C
80
VGE = 15V
9V
70 13V
11V
60
7V
50
40
6V
30
20
10
5V
0
0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
80
VGE = 15V
9V
70
13V
11V
7V
60
50
40 6V
30
20
10
5V
0
0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
4.8
TJ = 25ºC
4.5
4.2
3.9
IC = 80A
40A
3.6 20A
3.3
3
2.7
2.4
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2004 IXYS All rights reserved
IXGR 50N60C2
IXGRwww5.D0atNaSh6ee0t4UC.co2mD1
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
VGE = 15V
280 13V
11V
240
200 9V
160
120
7V
80
40
5V
0
0 1 2 3 4 5 6 7 8 9 10
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.2
VGE = 15V
1.1
1.0 IC = 80A
0.9
0.8 IC = 40A
0.7
0.6
0.5
25
IC = 20A
50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Adm ittance
200
180
160
140
120
100
80
60
TJ = 125ºC
40 25ºC
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
VG E - Volts


3Pages


IXGR50N60C2D1 電子部品, 半導体
IXGR 50N60C2
IXGR 50N60C2D1www.DataSheet4U.com
160 4000
80
A
140
TVJ= 100°C
nC VR = 300V
A
TVVRJ==
100°C
300V
IF 120
100
80
60
TVJ= 25°C
TVJ=100°C
TVJ=150°C
3000
Qr
2000
IIIFFF===1632000AAA
60
IRM
40
IF=120A
IF= 60A
IF= 30A
40 1000
20
20
0
0 1 2V
VF
Fig. 18 Forward current IF versus VF
0
100 A/µs 1000
-diF/dt
Fig. 19 Reverse recovery charge Qr
versus -diF/dt
0
0
Fig. 20
200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Fig. 21
Dynamic parameters
versus TVJ
Qr,
IRM
1
K/W
0.1
ZthJC
0.01
140
ns
130
trr
120
110
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
20
V
VFR
15
tfr
10
1.6
µs
tfr
VFR 1.2
0.8
100
90
80
0
Fig. 22
200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
5 0.4
TVJ= 100°C
0 IF = 60A
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 23
tfr
Peak forward voltage VFR and
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.3073
0.0055
2
0.3533
0.0092
3
0.0887
0.0007
4
0.1008
0.0399
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 24 Transient thermal resistance junction to case
0.1
DSEP 2x61-06A
s1
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

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部品番号部品説明メーカ
IXGR50N60C2D1

HiPerFAST IGBT with Diode

IXYS
IXYS


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