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PDF IXGR60N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR60N60B2D1 | |
| Descripción | HiPerFAST IGBT ISOPLUS247 | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Data
www.DataSheet4U.com
HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 60N60B2
IXGR 60N60B2D1
B2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.0 V
= 100 ns
D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
TC = 25°C
50/60 Hz, RMS, t = 1m
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
47 A
300 A
ICM = 150
A
250
-55 ... +150
150
-55 ... +150
2500
5
300
W
°C
°C
°C
V
g
°C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
300 µA
5 mA
±100 nA
2.0 V
PLUS247(IXGR)
E153432
C E (ISOLATED TAB)
G = Gate
C = Collector
E = Emitter
Features
z DCB Isolated mounting tab
z Meets TO-247AD package Outline
z High current handling capability
z Latest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z Easy assembly
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99161(04/04)
1 page  
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
350
td(off)
300
tfi - - - - - -
IC = 25A
50A
250
RG = 3.3Ω
VGE = 15V
100A
VCE = 400V
200
150
IC = 100A
100 50A
25A
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGR 60N60B2
IXGRwww.6Da0taNShe6et40UB.com2D1
Fig. 14. Gate Charge
15
VCE = 300V
12 IC = 50A
IG = 10mA
9
6
3
0
0 20 40 60 80 100 120 140 160 180
QG - nanoCoulombs
10000
1000
100
Fig. 15. Capacitance
f = 1 MHz
Cies
Coes
Cres
10
0
5 10 15 20 25 30 35 40
VCE - Volts
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10
Puls e W idth - millis ec onds
100
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGR60N60B2D1.PDF ] | |
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