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IXFV96N15PS の電気的特性と機能

IXFV96N15PSのメーカーはIXYSです、この部品の機能は「PolarHT HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFV96N15PS
部品説明 PolarHT HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFV96N15PS Datasheet, IXFV96N15PS PDF,ピン配置, 機能
PolarHTTM HiPerFET
Power MOSFET
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
N-Channel Enhancement Mode
Preliminary Data Sheet
V = 150 VDSS
www.DataSheet4U.com
ID25 = 96 A
=RDS(on) 24 m
trr < 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 175°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
Mounting torque (TO-247)
TO-247
PLUS220
Maximum Ratings
150 V
150 V
TO-247 (IXFH)
±20 V
±30 V
96 A
GDS
(TAB)
75 A
250 A
60 A PLUS220 (IXFV)
40 mJ
1.0 J
10 V/ns
G
DS
D (TAB)
480
-55 ... +175
175
-55 ... +150
W PLUS220SMD (IXFV__S)
°C
°C
°C
300 °C
250 °C
11...65/2.4...11
N/lb
1.13/10 Nm/lb.in.
6g
4g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 4 mA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
24 m
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99208(09/04)

1 Page





IXFV96N15PS pdf, ピン配列
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
0.5 1 1.5 2 2.5
VD S - Volts
Fig. 3. Output Characteristics
@ 150ºC
100
90
VGS = 10V
9V
80
70
60 8V
50
40
30 7V
20 6V
10 5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
3.8
3.4
3 TJ = 175ºC
2.6
2.2 VGS = 10V
1.8
1.4 VGS = 15V
TJ = 25ºC
1
0.6
0
50 100 150
I D - Amperes
200
250
© 2004 IXYS All rights reserved
IXFH 96N15P
IXFV 96N15P IXFV 96N15PS
Fig. 2. Extended Outpuwt wCwh.aDraatacStehereist4tUic.csom
@ 25ºC
200
VGS = 10V
175
150
9V
125
100
8V
75
50
7V
25
6V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2.8
2.6 VGS = 10V
2.4
2.2
2
1.8 ID = 96A
1.6
1.4 ID = 48A
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70 External Lead Current
Lim it
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFV96N15P

PolarHT HiPerFET Power MOSFET

IXYS
IXYS
IXFV96N15PS

PolarHT HiPerFET Power MOSFET

IXYS
IXYS


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