IXTQ120N20P Datasheet PDF - IXYS
| Part Number | IXTQ120N20P | |
| Description | PolarHT Power MOSFET | |
| Manufacturers | IXYS | |
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There is a preview and IXTQ120N20P download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 120N20P
IXTK 120N20P
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on) ≤
www.DataSheet4U.com
200 V
120 A
22 mΩ
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 175°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
Maximum Ratings
200 V
200 V
±20 V
±30 V
120 A
75 A
300 A
60 A
60 mJ
2.0 J
10 V/ns
714 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
10 g
G
DS
TO-264(SP) (IXTK)
(TAB)
G
DS
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
22 mΩ
© 2004 IXYS All rights reserved
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99207(09/04)
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1.00
0.10
0.01
1
IXTK 120N20P
IXTQ 120N20P
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2004 IXYS All rights reserved
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