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IXTK120N20P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK120N20P
部品説明 PolarHT Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTK120N20P Datasheet, IXTK120N20P PDF,ピン配置, 機能
Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 120N20P
IXTK 120N20P
N-Channel Enhancement Mode
VDSS =
ID25 =
RDS(on)
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200 V
120 A
22 m
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 175°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
Maximum Ratings
200 V
200 V
±20 V
±30 V
120 A
75 A
300 A
60 A
60 mJ
2.0 J
10 V/ns
714 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
10 g
G
DS
TO-264(SP) (IXTK)
(TAB)
G
DS
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
22 m
© 2004 IXYS All rights reserved
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99207(09/04)

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