IXFK66N50Q2 Datasheet PDF - IXYS
| Part Number | IXFK66N50Q2 | |
| Description | HiPerFET Power MOSFETs Q-Class | |
| Manufacturers | IXYS | |
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There is a preview and IXFK66N50Q2 download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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HiPerFETTM
Power MOSFETs
Q-Class
IXFK 66N50Q2
IXFX 66N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Preliminary Data Sheet
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
500 V
500 V
±30 V
±40 V
66 A
264 A
66 A
75 mJ
4.0 J
20 V/ns
735
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6g
10 g
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VVGDSS
=
=
0VDVSS
TTJJ
=
=
25°C
125°C
VPGuSlse=
10 V,
test, t
ID
≤
3=000.5µs• ,IDd2u5 ty
cycle
d
≤
2
%
500
2.0
V
4.5 V
±200 nA
50 µA
2 mA
80 mΩ
VDSS
ID25
RDS(on)
= 500 Vwww.DataSheet4U.com
= 66 A
= 80 mΩ
trr ≤ 250 ns
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98983A(7/04)
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1.00
0.10
0.01
0.00
0.1
IXFK 66N50Q2
IXFX 66N50Q2
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1
10
100
1000
10000
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
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