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IXSP20N60B2のメーカーはIXYSです、この部品の機能は「High Speed IGBT」です。 |
部品番号 | IXSP20N60B2 |
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部品説明 | High Speed IGBT | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXSP20N60B2ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
High Speed IGBT
IXSP 20N60B2
IXSP 20N60B2D1
Short Circuit SOA Capability
www.DataSheet4U.com
VCES = 600 V
IC25 = 35 A
VCE(sat) = 2.5 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 82Ω
Clamped inductive load
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 82 Ω, non repetitive
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
D1
Maximum Ratings
600
600
± 20
± 30
35
20
11
60
ICM = 32
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
190
-55 ... +150
150
-55 ... +150
2
300
260
W
°C
°C
°C
g
°C
°C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = 16A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
3.5
SP20N60B2
SP20N60B2D1
6.5
25
85
± 100
2.5
V
V
µA
µA
nA
V
TO-220AB (IXSP)
GCE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
• L- ofworVloCwE(soatn) -state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99181A(07/04)
1 Page Fig. 1. Output Characte ristics
@ 25 ºC
32
VGE = 17V
28 15V
24
20 13V
16
12 11V
8
9V
4
7V
0
0.5 1 1.5 2 2.5 3 3.5 4
VC E - Volts
Fig. 3. Output Characteristics
@ 125 ºC
32
VGE = 17V
28 15V
24
20 13V
16
11V
12
8 9V
4
7V
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
8
7 TJ = 25ºC
6 IC = 32A
16A
5 8A
4
3
2
1
9
10 11 12 13 14 15 16 17 18 19 20
VG E - Volts
IXSP 20N60B2
IXSP 20wNww6.0DaBta2ShDee1t4U.com
Fig. 2. Extended Output Characte ristics
@ 25 ºC
70
VGE = 17V
60
50 15V
40
13V
30
20 11V
10 9V
0
0 2 4 6 8 10 12 14 16 18 20
VC E - Volts
Fig. 4. Dependence of VCE(sat) on
Tem perature
1.8
1.7 VGE = 15V
1.6
1.5
1.4 IC = 32A
1.3
1.2
1.1 IC = 16A
1.0
0.9
0.8
0.7 IC = 8A
0.6
-50 -25
0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Input Adm ittance
60
50
40
30
20
TJ = 125ºC
10 25ºC
-40ºC
0
6 7 8 9 10 11 12 13 14 15 16
VG E - Volts
3Pages IXSP 20N60B2
IXSPwww2.D0aNta6Sh0eBet42U.Dco1m
30
A
25
IF 20
TVJ = 150°C
15 TVJ = 100°C
10
5
0 TVJ = 25°C
0 1 2 3V
VF
Fig. 18. Forward current IF versus VF
250
nC
200
Qr
150
100
TVJ = 100°C
VR = 300 V
IF = 5 A
IF = 10 A
IF = 20 A
50
10
A
IRM 8
6
4
2
IF = 5 A
IF = 10 A
IF = 20 A
TVJ = 100°C
VR = 300 V
0
100 A/µs 1000
-diF/dt
Fig. 19. Reverse recovery charge Qr
0
0 200 400 600 A80/µ0s 1000
-diF/dt
Fig. 20. Peak reverse current IRM
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 C 160
TVJ
Fig. 21. Dynamic parameters Qr, IRM
ns
100
trr
80
60
TVJ = 100°C
VR = 300 V
IF = 5 A
IF = 10 A
IF = 20 A
40
60
V
TVJ = 100°C
IF = 10 A
VFR
40
20
VFR
0.3
µs
tfr
0.2
tfr 0.1
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 22. Recovery time trr versus -diF/dt
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 23. Peak forward voltage VFR and
10
K/W
1
ZthJC
0.1
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 1.449
0.0052
2
0.5578
0.0003
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
Fig. 24. Transient thermal resistance junction-to-case
DSEP 8-06B
s1
t
NOTE: Fig. 18 to Fig. 23 shows typical values
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
one or moreof the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
5,381,025 6,162,665 6,306,728 B1 6,534,343
5,486,715 6,259,123 B1 6,404,065B1 6,583,505
6,683,344
6,710,405B2
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IXSP20N60B2 | High Speed IGBT | IXYS |
IXSP20N60B2D1 | High Speed IGBT | IXYS |