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PDF IXGX32N170AH1 Data sheet ( Hoja de datos )
| Número de pieza | IXGX32N170AH1 | |
| Descripción | High Voltage IGBT with Diode | |
| Fabricantes | IXYS | |
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High Voltage
IGBT with Diode
Advance Technical Information
IXGX 32N170AH1
VCES
IC25
VCE(sat)
tfi(typ)
www.DataSheet4U.com
= 1700 V
= 32 A
= 5.0 V
= 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
IF90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1700
1700
±20
±30
TC = 25°C
TC = 90°C
32
21
55
TC = 25°C, 1 ms
110
VGE = 15 V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
ICM = 70
@ 0.8 VCES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
V
V
V
V
A
A
A
A
A
µs
PC TC = 25°C
TJ
TJM
Tstg
350
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
FC Mounting force
22...130/5...30 N/lb
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
300
6
°C
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 1mA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
V
5.0 V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
Note 1 TJ = 125°C
600 µA
10 mA
VCE = 0 V, VGE = ±20 V
±100 nA
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
4.0 5.0 V
4.8 V
PLUS247 (IXGX)
G
C
E
G = Gate,
E = Emitter,
(TAB)
C = Collector,
TAB = Collector
Features
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
© 2004 IXYS All rights reserved
DS99070A(10/04)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXGX32N170AH1.PDF ] | |
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