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IXSH30N60B2D1 の電気的特性と機能

IXSH30N60B2D1のメーカーはIXYSです、この部品の機能は「High Speed IGBT with Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXSH30N60B2D1
部品説明 High Speed IGBT with Diode
メーカ IXYS
ロゴ IXYS ロゴ 




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IXSH30N60B2D1 Datasheet, IXSH30N60B2D1 PDF,ピン配置, 機能
High Speed IGBT
with Diode
IXSH 30N60B2D1
IXST 30N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
www.DataSheet4U.com
VCES = 600 V
IC25 = 48 A
VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 10
Clamped inductive load
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 10 Ω, non repetitive
TC = 25°C
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
600
± 20
± 30
48
30
28
90
ICM = 48
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
250
-55 ... +150
150
-55 ... +150
6
5
300
260
W
°C
°C
°C
g
g
°C
°C
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 750 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = 24A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
4.0 7.0 V
150 µA
1 mA
± 100
2.5
nA
V
TO-247 (IXSH)
GCE
TO-268 (IXST)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99249(10/04)

1 Page





IXSH30N60B2D1 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25 ºC
60
VGE = 17V
15V
50
40 13V
30
11V
20
10 9V
0
0.5
60
50
1 1.5 2 2.5 3 3.5 4 4.5
VC E - Volts
Fig. 3. Output Characteristics
@ 125 ºC
VGE = 17V
15V
40 13V
30
11V
20
9V
10
7V
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
7
TJ = 25ºC
6
5
IC = 48A
24A
12A
4
3
2
1
9 10 11 12 13 14 15 16 17 18 19
VG E - Volts
IXSH 30N60B2D1
IXST 30wNw6w0.DBata2SDhe1et4U.com
Fig. 2. Extended Output Characteristics
@ 25 ºC
120
VGE = 17V
100
15V
80
60 13V
40
11V
20
9V
0
0 2 4 6 8 10 12 14 16 18 20
VC E - Volts
Fig. 4. Dependence of VCE(sat) on
Tem perature
2.0
1.8 VGE = 15V
1.6
IC = 48A
1.4
1.2 IC = 24A
1.0
0.8 IC = 12A
0.6
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
110
100
90
80
70
60
50
40
30
20
10
0
6
Fig. 6. Input Adm ittance
TJ = 125ºC
25ºC
-40ºC
8 10 12 14 16
VG E - Volts
18


3Pages


IXSH30N60B2D1 電子部品, 半導体
IXSH 30N60B2D1
IXSTwww3.D0aNta6Sh0eeBt42U.Dco1m
60
A
50
IF 40
30
20
TVJ=150°C
TVJ=100°C
10
TVJ=25°C
1000
nC TVJ= 100°C
800
Qr
600
IIIFFF===
60A
30A
15A
400
200
30
A
25
IRM
20
TVJ= 100°C
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
0 1 2 3V
VF
Fig. 18. Forward current IF versus VF
0
100 A/µs 1000
-diF/dt
Fig. 19. Reverse recovery charge
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 20. Peak reverse current IRM
2.0
1.5
Kf
1.0
0.5
IRM
Qr
90
ns
trr
80
70
TVJ= 100°C
IIIFFF===
60A
30A
15A
20
V
VFR
15
TVJ= 100°C
tfr
VFR
10
5
1.00
µs
tfr
0.75
0.50
0.25
0.0
0
40 80 120 °C 160
TVJ
FiFgi.g2.12.0.DDynyanmamicicpapraarmameteetresrsQQr, rI,RIMRM
60
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 22. Recovery time trr versus
0 0.00
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 23. Peak forward voltage VFR
1
K/W
0.1
ZthJC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
0.0052
0.0003
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 24. Transient thermal resistance junction to case
DSEP 29-06
0.1 s
t
1

6 Page



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部品番号部品説明メーカ
IXSH30N60B2D1

High Speed IGBT with Diode

IXYS
IXYS


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