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PDF IXST30N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXST30N60B2D1 | |
| Descripción | High Speed IGBT with Diode | |
| Fabricantes | IXYS | |
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High Speed IGBT
with Diode
IXSH 30N60B2D1
IXST 30N60B2D1
Short Circuit SOA Capability
Preliminary Data Sheet
www.DataSheet4U.com
VCES = 600 V
IC25 = 48 A
VCE(sat) = 2.5 V
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 10Ω
Clamped inductive load
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 10 Ω, non repetitive
TC = 25°C
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
Maximum Ratings
600
600
± 20
± 30
48
30
28
90
ICM = 48
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
250
-55 ... +150
150
-55 ... +150
6
5
300
260
W
°C
°C
°C
g
g
°C
°C
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 750 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = 24A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
4.0 7.0 V
150 µA
1 mA
± 100
2.5
nA
V
TO-247 (IXSH)
GCE
TO-268 (IXST)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
•
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99249(10/04)
1 page  
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
260
td(off)
240 tfi - - - - - - IC = 48A
220 RG = 5Ω
VGE = 15V
24A
12A
200 VCE = 400V
180
160
140
IC = 12A
24A
120
48A
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
IXSH 30N60B2D1
IXST 30wNw6w0.DBata2SDhe1et4U.com
Fig. 14. Gate Charge
16
14
12
10
8
6
4
2
0
0
VCE = 300V
I C = 24A
I G = 10mA
5 10 15 20 25 30 35 40 45 50 55
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
50
45
40
35
30
25
20
15 TJ = 125ºC
10 RG = 10Ω
5 dV/dT < 10V/ns
0
100 150 200 250 300 350 400 450 500 550 600
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
1
0.1
1
10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXST30N60B2D1.PDF ] | |
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