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IXSQ10N60B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSQ10N60B2D1
部品説明 High Speed IGBT with Diode
メーカ IXYS
ロゴ IXYS ロゴ 



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IXSQ10N60B2D1 Datasheet, IXSQ10N60B2D1 PDF,ピン配置, 機能
High Speed IGBT
with Diode
IXSH 10N60B2D1
IXSQ 10N60B2D1
Short Circuit SOA Capability
www.DataSheet4U.com
VCES = 600 V
IC25 = 20 A
VCE(sat) = 2.5 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 82
Clamped inductive load, VGE = 20 V
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 150 Ω, non repetitive
TC = 25°C
Mounting torque
TO-247
TO-3P
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
D1
Maximum Ratings
600
600
± 20
± 30
20
10
11
30
ICM = 20
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
100 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.3/10 Nm/lb. in
5g
5g
300 °C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 10A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4.0 7.0 V
75 µA
200 µA
± 100 nA
2.5 V
TO-247 (IXSH)
GCE
TO-3P (IXSQ)
(TAB)
G
C
E
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99236(10/04)

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IXSQ10N60B2D1

High Speed IGBT with Diode

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