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IXFN50N80Q2のメーカーはIXYSです、この部品の機能は「PolarHT Power MOSFET」です。 |
部品番号 | IXFN50N80Q2 |
| |
部品説明 | PolarHT Power MOSFET | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXFN50N80Q2ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
HiPerFETTM
Power MOSFET
IXFN 50N80Q2
N-Channel Enhancement Mode
Avalanche Rated,
High dV /dt, Low trr
Low Qg,
Low
Intrinsic
Rg
www.DataSheet4U.com
VDSS =
ID25 =
RDS(on)=
800 V
50 A
0.15 Ω
trr ≤ 300 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IIADRM
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
800 V
800 V
±30 V
±40 V
50 A
200 A
50 A
60 mJ
5.0 J
20 V/ns
890 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
V = 0 V, I = 1mA
GS D
V = V ,I = 8mA
DS G S D
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VNGoSt=e
10
1
V,
ID
=
0.5
•
ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800 V
2.5 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
50 µA
3 mA
0.15 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
© 2004 IXYS All rights reserved
DS99028A(09/04)
1 Page 40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics
@ 25 Deg. C
VGS = 10V
7V
6V
5V
12 34 5 6
VDS - Volts
7
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
7V
6V
5V
3 6 9 12
VDS - Volts
15
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
2.8
2.5 VGS = 10V
2.2
TJ = 125º C
1.9
1.6
1.3
1
0.7
0
TJ = 25º C
10 20 30 40 50 60 70 80 90 100
I D - Amperes
© 2004 IXYS All rights reserved
IXFN50N80Q2
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25 deg. C
90
80 VGS = 10V
70 7V
60
50
40 6V
30
20
5V
10
0
0 3 6 9 12 15 18 21
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
2.8
2.5 VGS = 10V
2.2
1.9
I D= 50A
1.6
1.3 I D= 25A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
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部品番号 | 部品説明 | メーカ |
IXFN50N80Q2 | PolarHT Power MOSFET | IXYS |