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IXTH50P10 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH50P10
部品説明 Standard Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTH50P10 Datasheet, IXTH50P10 PDF,ピン配置, 機能
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 50P10
IXTT 50P10
VDSS
ID25
RDS(on)
= -100 Vwww.DataSheet4U.com
= -50 A
= 55 m
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
(TO-247)
(TO-268)
Maximum Ratings
-100
-100
V
V
±20 V
±30 V
-50
-200
-50
A
A
A
30 mJ
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
VGS = -10 V, ID = 0.5 • ID25
-100
-3.0
TJ = 25°C
TJ = 125°C
V
-5.0 V
±100 nA
-25 µA
-1 mA
55 m
TO-247 AD (IXTH)
D (TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2004 IXYS All rights reserved
DS98905D(10/04)

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