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PDF IXFK69N30P Data sheet ( Hoja de datos )
| Número de pieza | IXFK69N30P | |
| Descripción | PolarHT HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXFH69N30P
IXFK69N30P
VDSS
ID25
RDS(on)
trr
= 300 Vwww.DataSheet4U.com
= 69 A
= 49 mΩ
≤ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-264
Maximum Ratings TO-247 (IXFH)
300 V
300 V
±20 V
±30 V
GDS
69 A TO-264 (IXFK)
200 A
69 A
50 mJ
1.5 J
10 V/ns
GDS
D (TAB)
D (TAB)
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
10 g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
49 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99220(12/04)
1 page  
1.00
0.10
0.01
1
Fig. 13. Maxim um Transient Therm al Resistance
IXFH 69N30P
IXFK 69N30P
www.DataSheet4U.com
10 100
Pulse Width - milliseconds
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFK69N30P.PDF ] | |
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