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IXTV26N50PS PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV26N50PS
部品説明 PolarHV Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTV26N50PS Datasheet, IXTV26N50PS PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
Advanced Technical Information
IXTQ 26N50P
IXTV 26N50P
IXTV 26N50PS
VDSS
ID25
RDS(on)
= 500 Vwww.DataSheet4U.com
= 26 A
230 m
Symbol
Test Conditions
Maximum Ratings TO-3P (IXTQ)
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuos
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
PLUS220
500 V
500 V
±20 V
±30 V G
D
26 A
S
78 A
26 A PLUS220 (IXTV)
40 mJ
1.0 J
10 V/ns
G
DS
D (TAB)
D (TAB)
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
5g
PLUS220SMD (IXTV_S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
230 m
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99206(11/04)

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