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IXTK170N10P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK170N10P
部品説明 PolarHT Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTK170N10P Datasheet, IXTK170N10P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
IXTQ 170N10P
IXTT 170N10P
IXTK 170N10P
N-Channel Enhancement Mode
Preliminary Data Sheet
VDSS
= 100 Vwww.DataSheet4U.com
ID25 = 170 A
=RDS(on) 9.0 m
Symbol
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 M
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-264
TO-268
100 V
100 V
±20 V
170 A G
75 A
DS
350 A
60 A
80 mJ TO-268 (IXTT)
2.0 J
(TAB)
10 V/ns
714 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
10 g
5.0 g
GS
TO-264 (IXTK)
G
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
D (TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 350A
Pulse test, t 300 µs, duty cycle d 2 %
9.0 m
7.0 m
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99176A(11/04)

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