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PDF IXFR66N50Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFR66N50Q2 | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFR 66N50Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TTsJtMg
TL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting force
Maximum Ratings
500 V
500 V
±30 V
±40 V
50 A
264 A
66 A
75 mJ
4.0 J
20 V/ns
500
-55 ... +150
150
-55 ... +150
300
22...130/5...30
5
W
°C
°C
°C
°C
N/lb
g
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
2.0
V
4.5 V
±200 nA
50 µA
2 mA
85 mΩ
V = 500 Vwww.DataSheet4U.com
DSS
I = 50 A
D25
R=
DS(on)
85 mΩ
t
rr
≤ 250 ns
ISOPLUS247TM (IXFR)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99076(8/03)
1 page  
IXFR 66N50Q2
1.000
Fig. 13. Maxim um Transient Therm al Resistance
www.DataSheet4U.com
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFR66N50Q2.PDF ] | |
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