DataSheet.jp

IXFV110N10P の電気的特性と機能

IXFV110N10PのメーカーはIXYSです、この部品の機能は「PolarHT HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFV110N10P
部品説明 PolarHT HiPerFET Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 




このページの下部にプレビューとIXFV110N10Pダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

IXFV110N10P Datasheet, IXFV110N10P PDF,ピン配置, 機能
PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
www.DataSheet4U.com
V = 100 V
DSS
ID25 = 110 A
=RDS(on) 15 m
Preliminary Data Sheet
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGSS
VGSM
I
D25
ID(RMS)
IDM
I
AR
EAR
EAS
dv/dt
P
D
T
J
TJM
T
stg
TL
Md
FC
Weight
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
M
Continuous
Transient
T
C
= 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247)
Mounting Force (PLUS220)
TO-247
PLUS220 & PLUS220 SMD
100 V
100 V
±20 V
±30 V
110 A
75 A
250 A
60 A
40 mJ
1.0 J
10 V/ns
480
-55 ... +175
175
-55 ... +150
W
°C
°C
°C
300 °C
250 °C
1.13/10 Nm/lb.in.
11..65 / 2.5..15
N/lb
6g
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
15 m
G
D
S
PLUS220 (IXFV)
(TAB)
G
DS
PLUS220 SMD-HV
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Fast intrinsic diode
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99212A(01/05)

1 Page





IXFV110N10P pdf, ピン配列
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VD S - Volts
2
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
4
Fig. 5. RDS(on) Norm alize d to 0.5 ID25
Value vs. Drain Current
3
2.8
2.6
2.4 TJ = 175ºC
2.2
2
1.8
1.6 VGS = 10V
1.4 VGS = 15V
1.2
1
TJ = 25ºC
0.8
0.6
0 25 50 75 100 125 150 175 200 225 250
I D - Amperes
© 2005 IXYS All rights reserved
IXFH 110N10P IXFV 110N10P
IXFV 110N10PS
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200
VGS = 10V
180
160 9V
140
120
8V
100
80
60 7V
40
20 6V
0
0 1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2.4
2.2 VGS = 10V
2
1.8
ID = 110A
1.6
1.4 ID = 55A
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70 External Lead Current Limit
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ IXFV110N10P データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXFV110N10P

PolarHT HiPerFET Power MOSFET

IXYS
IXYS
IXFV110N10PS

PolarHT HiPerFET Power MOSFET

IXYS
IXYS


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap