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PDF IXFC110N10P Data sheet ( Hoja de datos )
| Número de pieza | IXFC110N10P | |
| Descripción | PolarHT HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
IXFC 110N10P
www.DataSheet4U.com
V = 100 V
DSS
ID25 = 66 A
=RDS(on) 17 mΩ
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGSS
VGSM
I
D25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
T
L
F
C
Weight
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting Force
ISOPLUS220
(PLUS220)
100
100
±20
±30
66
250
60
40
1.0
10
158
-55 ... +175
175
-55 ... +150
300
250
11..65 / 2.5..15
2
V
V
V
V
A
A
A
mJ
J
V/ns
ISOPLUS220TM(IXFC)
E153432
G
DS
G = Gate
S = Source
D = Drain
W
°C
°C Features
°C z Fast intrinsic diode
z Unclamped Inductive Switching (UIS)
°C rated
°C z Low package inductance
- easy to drive and to protect
N/lb z Silicon chip on Direct-Copper-Bond
g substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
V
GS(th)
V = V , I = 4 mA
DS GS D
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 55 A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
17 m Ω
Advantages
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99212(01/05)
1 page  
IXFC 110N10P
Fig. 13. Maximum Transient Thermal Resistance www.DataSheet4U.com
1.00
0.10
0.01
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFC110N10P.PDF ] | |
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