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IXTK180N15PのメーカーはIXYSです、この部品の機能は「PolarHT Power MOSFET」です。 |
部品番号 | IXTK180N15P |
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部品説明 | PolarHT Power MOSFET | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXTK180N15Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Technical Information
PolarHTTM
Power MOSFET
IXTK 180N15P
N-Channel Enhancement Mode
VDSS
ID25
= 150 Vwww.DataSheet4U.com
= 180 A
≤RDS(on) 11 mΩ
Symbol
Test Conditions
Maximum Ratings TO-264 (IXTK)
VDSS
VDGR
VDSS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
100 V
100 V
±20 V
±30 V
180 A
75 A
380 A
60 A
100 mJ
4J
10 V/ns
800 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
10 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 500µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
11 mΩ
G DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99297(01/05)
1 Page 180
160
140
120
100
80
60
40
20
0
0
180
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6
0.4 0.8 1.2
VD S - Volts
1.6
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
2
4
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
3.4
3.1
TJ = 175ºC
2.8
2.5
2.2
VGS = 10V
1.9
VGS = 15V
1.6
1.3 TJ = 25ºC
1
0.7
0
50 100 150 200 250 300 350
I D - Amperes
© 2005 IXYS All rights reserved
IXTK 180N15P
Fig. 2. Extended Output Cwhwawr.aDcattearSihseteict4sU.com
@ 25ºC
320
VGS = 10V
280
9V
240
200
8V
160
120
80 7V
40
6V
0
0 1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m perature
2.8
2.6 VGS = 10V
2.4
2.2
2
1.8 ID = 180A
1.6
1.4 ID = 90A
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
90
80 External Lead Current Limit
70
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTK180N15 | High Current MegaMOSTMFET | IXYS Corporation |
IXTK180N15P | PolarHT Power MOSFET | IXYS |